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 Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION With TO-3 package Respectively complement to type MJ4030/4031/4032 DARLINGTON High DC current gain APPLICATIONS For use as output devices in complementary general purpose amplifier applications
PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector DESCRIPTION
MJ4033/4034/4035
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=ae )
SYMBOL

PARAMETER
VCBO
INC
Collector-base voltage
ANG H
MJ4033 MJ4034
E SEM
Open base
OND IC
CONDITIONS
TOR UC
VALUE 60 80 100 60 80 100
UNIT
Open emitter
V
MJ4035 MJ4033 MJ4034 MJ4035
VCEO
Collector-emitter voltage
V
VEBO IC ICM IB PC Tj Tstg
Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature
Open collector
5 16 20 0.5
V A A A W ae ae
TC=25ae
150 200 -65~200
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER MJ4033 VCEO(SUS) Collector-emitter sustaining voltage MJ4034 MJ4035 VCEsat-1 VCEsat-2 VBE Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage IC=10A; IB=40mA IC=16A; IB=80mA IC=10A ; VCE=3V VCE=30V; IB=0 ICEO Collector cut-off current VCE=40V; IB=0 VCE=50V; IB=0 VEB=5V; IC=0 IC=0.1A ;IB=0 CONDITIONS
MJ4033/4034/4035
SYMBOL
MIN 60 80 100
TYP.
MAX
UNIT
V
2.5 4.0 3.0
V V V
IEBO hFE
Emitter cut-off current DC current gain

THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal resistance junction to case MAX 1.17 UNIT ae /W
CHA IN
E SEM NG
IC=10A ; VCE=3V
OND IC
TOR UC
5.0
3.0
mA
mA
1000
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
MJ4033/4034/4035

CHA IN
E SEM NG
OND IC
TOR UC
Fig.2 outline dimensions (unindicated tolerance:A
0.1mm)
3


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